Localized Fabrication of Self-Assembled Quantum Structures on photolithographically patterned surfaces with the surface modulation of only 35nm
J. H. Lee*, Zh. M. Wang, B. L. Liang, W. T. Black, Vas P. Kunets, Yu I. Mazur, and G. J. Salamo
Institute of Nanoscale Science and Engineering University of Arkansas, Fayetteville, AR 72701, USA
* Email: jxl14@uark.edu
Institute of Nanoscale Science and Engineering University of Arkansas, Fayetteville, AR 72701, USA
* Email: jxl14@uark.edu
Semiconductor quantum nanostructures with two and three dimensional confinement have received significant attention due to their unique physical, optical and electronic properties [1-5], which have led to many device applications [6-8]. For some device applications, localized fabrication of quantum structures is of necessary. To realize localization of quantum nanostructures, photolithographically patterned surface can provide a successful route for the nucleation to generate tailored quantum nanostructures and the ensembles of quantum nanostructures. Therefore, the use of nano-scale patterns to guide the formation of nano- and quantum-structures has attracted considerable attentions [9-12]. To date, most investigations to generate ordered arrays of quantum nanostructures have been demonstrated on deeply patterned substrates that are on the order of a few hundred nanometers to microns in depth.
In this work, we present localized formations of several quantum structures including self-assembled InAs quantum dots (QDs) and GaAs quantum wires on photolithographically nano-patterned GaAs (100) surfaces using molecular-beam epitaxy (MBE). In distinction from the former works [9-12], the presented results were demonstrated on nano-scale shallow patterns of only 35nm, which can potentially provide flexibility on quantum-structures based device fabrication.
Video Content Length 25:23 Copyright: © 2008 Lee et al
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[3] X. Q. Li, Y. W. Wu, D. Steel, D. Gammon, T. H. Stievater, D. S. Katzer, D. Park, C. Piermarocchi, L. J. Sham, Science 301, 809 (2003).
[4] L. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, K. H. Petroff, Appl. Phys. Lett. 63, 3203 (1993).
[5] E. A. Stinaff, M. Scheibner, A. S. Bracker, I. V. Ponomarev, V. L. Korenev, M. E. Ware, M. F. Doty, T. L. Reinecke, D. Gammon, Science 311, 636 (2006).
[6] D. J. Mowbray and M. S. Skolnick, J. Phys. D: Appl. Phys. 38, 2059 (2005).
[7] Brian Julsgaard, Jacob Sherson, J. Ignacio Cirac, Fiura´ sˇek Jaromı´r, Eugene S. Polzik, Nature, 432, 482 (2004).
[8] David P DiVincenzo, Science 309, 2173 (2005).
[9] Tung-Po Hsieh, Pei-Chin Chiu, Yu-Chuan Liu, Nien-Tze Yeh, Wen-Jeng Ho, Jen-Inn Chyi, J. Vac. Sci. Technol. B, 23(1), 262 (2005).
[10] R. Tsui, R. Zhang, K. Shiralagi, and H. Goronkin, Appl. Phys. Lett. 71, 3254 (1997).
[11] A. Konkar, R. Heitz, T. R. Ramachandran, P. Chen, A.Madhukar, J. Vac. Sci. Technol. B, 16(3), 1334 (1998).
[12] R. V. Kukta, D. Kouris, J. Appl. Phys. 97, 033527 (2005).
Citation
J. H. Lee, Zh. M. Wang, B. L. Liang, W. T. Black, Vas P. Kunets, Yu I. Mazur, and G. J. Salamo,
OAtube Nanotechnology 1, 904 (2008). http://www.oatube.org/2008/09/jhlee.html
OAtube Nanotechnology 1, 904 (2008). http://www.oatube.org/2008/09/jhlee.html
